A 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier with uniformly distributed voltage stresses.
Donggu ImKuduck KwonIn-Young LeePublished in: Int. J. Circuit Theory Appl. (2017)
Keyphrases
- uniformly distributed
- silicon on insulator
- ibm power processor
- cmos technology
- low voltage
- power consumption
- power management
- low power
- uniform distribution
- high speed
- transmission line
- random numbers
- power system
- field effect transistors
- chip design
- wide dynamic range
- power dissipation
- error resilience
- power supply
- dynamic range
- parallel processing