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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz.

Hanghai DuLu HaoZhihong LiuZeyu SongYachao ZhangKui DangJin ZhouJing NingZan LiJincheng ZhangYue Hao
Published in: Sci. China Inf. Sci. (2024)
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