Login / Signup

A 0.9V 0.1-4GHz LNTA in 28-nm CMOS Achieving +11.3dBm IIP3 With Self-loaded Linearization Technique.

Fan ChenWei LiChuangguo WangHongtao Xu
Published in: ASICON (2021)
Keyphrases
  • high speed
  • cmos technology
  • power consumption
  • low power
  • nm technology
  • silicon on insulator
  • metal oxide semiconductor
  • low cost
  • power supply
  • circuit design
  • analog vlsi
  • parallel processing
  • mixed integer