Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs.
Xueqing LiJuejian WuKai NiSumitha GeorgeKaisheng MaJohn SampsonSumeet Kumar GuptaYongpan LiuHuazhong YangSuman DattaVijaykrishnan NarayananPublished in: IEEE Des. Test (2019)