A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications.
June LeeSung-Soo LeeOh-Suk KwonKyeong-Han LeeDae-Seok ByeonIn-Young KimKyoung-Hwa LeeYoung-Ho LimByung-Soon ChoiJong-Sik LeeWang-Chul ShinJeong-Hyuk ChoiKang-Deog SuhPublished in: IEEE J. Solid State Circuits (2003)
Keyphrases
- flash memory
- mass storage
- high speed
- cmos technology
- silicon on insulator
- random access memory
- solid state
- metal oxide semiconductor
- nm technology
- garbage collection
- low power
- main memory
- embedded systems
- random access
- buffer management
- file system
- low cost
- disk drives
- power consumption
- data storage
- b tree
- database systems
- low voltage
- storage systems
- hand held devices
- storage devices
- memory management
- real time
- small size
- multi dimensional
- single chip
- image sensor
- ibm power processor
- database management systems
- general purpose
- data structure