A 0.6 V, 1.74 ps Resolution Capacitively Boosted Time-to-Digital Converter in 180 nm CMOS.
Arjun Ramaswami PalaniappanLiter SiekPublished in: ISCAS (2019)
Keyphrases
- analog to digital converter
- metal oxide semiconductor
- data conversion
- low voltage
- circuit design
- cmos technology
- low cost
- mixed signal
- cmos image sensor
- high voltage
- high speed
- high resolution
- power consumption
- low resolution
- vlsi circuits
- design considerations
- digital libraries
- power supply
- random forests
- nm technology
- single phase
- low power
- analog vlsi
- control method