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A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness.

Sirui AnMinhan MiPengfei WangSijia LiuQing ZhuMeng ZhangZhihong ChenJielong LiuSiyin GuoCan GongXiaohua MaYue Hao
Published in: Sci. China Inf. Sci. (2024)
Keyphrases
  • integrated circuit
  • multiscale
  • data structure
  • neural network
  • information systems
  • threshold values
  • multiple access