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MLiM: High-Performance Magnetic Logic in-Memory Scheme With Unipolar Switching SOT-MRAM.
Bi Wu
Haonan Zhu
Ke Chen
Chenggang Yan
Weiqiang Liu
Published in:
IEEE Trans. Circuits Syst. I Regul. Pap. (2023)
Keyphrases
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random access memory
embedded dram
design considerations
low voltage
memory access
neural network
data access
video sequences
hidden markov models
high speed
logic programming
main memory
magnetic field