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A Fully Integrated 150-GHz Transceiver Front-End in 65-nm CMOS.
Xiangyu Meng
Baoyong Chi
Yibo Liu
Taikun Ma
Zhihua Wang
Published in:
IEEE Trans. Circuits Syst. II Express Briefs (2019)
Keyphrases
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fully integrated
high speed
cmos technology
silicon on insulator
ultra low power
nm technology
low power
power consumption
metal oxide semiconductor
frequency band
ultra wide band
low cost
low voltage
image sensor
workflow management
power dissipation
ibm power processor
data structure
distributed systems
query processing
information technology