A Fully Integrated 150-GHz Transceiver Front-End in 65-nm CMOS.
Xiangyu MengBaoyong ChiYibo LiuTaikun MaZhihua WangPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2019)
Keyphrases
- fully integrated
- high speed
- cmos technology
- silicon on insulator
- ultra low power
- nm technology
- low power
- power consumption
- metal oxide semiconductor
- frequency band
- ultra wide band
- low cost
- low voltage
- image sensor
- workflow management
- power dissipation
- ibm power processor
- data structure
- distributed systems
- query processing
- information technology