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Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors.

Tomohisa MiyaoTakahisa TanakaItsuki ImanishiMasayuki IchikawaShuya NakagawaHiroki IshikuroToshitsugu SakamotoMunehiro TadaKen Uchida
Published in: DRC (2022)
Keyphrases
  • cmos technology
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