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Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell.
Hao Cai
Yanan Guo
Bo Liu
Mingyang Zhou
Juntong Chen
Xinning Liu
Jun Yang
Published in:
CoRR (2021)
Keyphrases
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random access memory
design considerations
computing power
main memory
limited memory
real time
high speed