All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs.
Hao XueTowhidur RazzakSeongmo HwangAntwon ColemanSanyam BajajYuewei ZhangZane Jamal-EddinShahadat Hasan SohelAsif KhanSiddharth RajanWu LuPublished in: DRC (2018)
Keyphrases
- genetic algorithm ga
- genetic algorithm
- cmos technology
- nm technology
- fitness function
- total length
- maximum number
- multi objective
- evolutionary algorithm
- artificial neural networks
- penalty function
- neural network
- nano scale
- parameter set
- fixed length
- hybrid algorithm
- low power
- optimization method
- initial population
- hybrid genetic algorithm
- evolutionary computation
- random search
- search space
- fitness landscape
- high speed
- parallel genetic algorithm
- low cost
- metal oxide semiconductor
- fuzzy logic