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A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS.
Tong Wang
Toshiya Mitomo
Naoko Ono
Shigehito Saigusa
Osamu Watanabe
Published in:
IEICE Trans. Electron. (2013)
Keyphrases
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power consumption
clock gating
high speed
low power
clock frequency
high power
cmos technology
frequency band
silicon on insulator
dielectric constant
nm technology
power management
low cost
dual band
power reduction
power dissipation
power supply
radiation pattern
dynamic range
computational power
real time
intel xeon