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An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance.

Fei CaoMengtian BaoXue WuWen-Ju WangCheng-Hao YuYing Wang
Published in: IEEE Access (2019)
Keyphrases
  • design methodology
  • computer simulation
  • significantly higher
  • slightly higher
  • light emitting
  • database
  • image sequences
  • preprocessing
  • transmission line