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2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology.

Tz-Yi LiuTian Hong YanRoy ScheuerleinYingchang ChenJeffrey KoonYee LeeGopinath BalakrishnanGordon YeeHenry ZhangAlex YapJingwen OuyangTakahiko SasakiAli Al-ShammaChin-Yu ChenMayank GuptaGreg HiltonAchal KathuriaVincent LaiMasahide MatsumotoAnurag NigamAnil PaiJayesh PakhaleChang Hua SiauXiaoxia WuYibo YinNicolas NagelYoichiro TanakaMasaaki HigashitaniTim MinvielleChandu GorlaTakayuki TsukamotoTakeshi YamaguchiMutsumi OkajimaTakayuki OkamuraSatoru TakaseHirofumi InoueLuca Fasoli
Published in: IEEE J. Solid State Circuits (2014)
Keyphrases
  • nm technology
  • power consumption
  • low power
  • power dissipation
  • computing power
  • high speed
  • multi layer
  • neural network
  • limited memory
  • read write
  • image segmentation
  • data acquisition
  • main memory
  • memory space