A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.
Jung-Sik KimChi Sung OhHocheol LeeDonghyuk LeeHyong-Ryol HwangSooman HwangByongwook NaJoungwook MoonJin-Guk KimHanna ParkJang-Woo RyuKiwon ParkSang-Kyu KangSo-Young KimHoyoung KimJong-Min BangHyunyoon ChoMinsoo JangCheolmin HanJung-Bae LeeJoo-Sun ChoiYoung-Hyun JunPublished in: IEEE J. Solid State Circuits (2012)