In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory.
B. L. JiH. LiQ. YeS. GausepohlS. DeoraD. VekslerS. VivekanandH. ChongH. StamperT. BurroughsC. JohnsonM. SmalleyS. BennettV. KaushikJ. PiccirilloM. RodgersM. PassaroM. LiehrPublished in: CoRR (2015)