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Spin-transfer torque magnetic random access memory (STT-MRAM).

Dmytro ApalkovAlexey KhvalkovskiySteven WattsVladimir NikitinXueti TangDaniel LottisKiseok MoonXiao LuoEugene ChenAdrian OngAlexander Driskill-SmithMohamad Krounbi
Published in: ACM J. Emerg. Technol. Comput. Syst. (2013)
Keyphrases
  • random access memory
  • design considerations
  • low voltage
  • real time
  • low cost
  • flash memory
  • embedded dram
  • object oriented
  • graphical models
  • signal processing
  • room temperature