An experimental 295 MHz CMOS 4K⨉256 SRAM using bidirectional read/write shared sense amps and self-timed pulsed word-line drivers.
Natsuki KushiyamaCharles TanRichard ClarkJane LinFred PernerLisa MartinMark LeonardGene CoussensKit ChamPublished in: IEEE J. Solid State Circuits (1995)