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An experimental 295 MHz CMOS 4K⨉256 SRAM using bidirectional read/write shared sense amps and self-timed pulsed word-line drivers.

Natsuki KushiyamaCharles TanRichard ClarkJane LinFred PernerLisa MartinMark LeonardGene CoussensKit Cham
Published in: IEEE J. Solid State Circuits (1995)
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