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Low power and high uniformity of HfO x -based RRAM via tip-enhanced electric fields.

Xiaokang LiBaotong ZhangBowen WangXiaoyan XuYuancheng YangShuang SunQifeng CaiShijie HuXia AnMing LiRu Huang
Published in: Sci. China Inf. Sci. (2019)
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