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Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage.
J. Wang
L. Cao
Jinqiao Xie
Edward Beam
C. Youtsey
R. McfCarthy
L. Guido
Patrick Fay
Published in:
DRC (2018)
Keyphrases
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