Login / Signup
A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology.
Toshifumi Nakatani
Mohammad Ali Zolfaghari
Jonmei J. Yan
Peter M. Asbeck
Published in:
BCICTS (2022)
Keyphrases
</>
power consumption
high power
nm technology
silicon on insulator
case study
data processing
rapid development
key technologies
learning environment
computer systems
cost effective
dynamic range
low cost
input data
power distribution