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A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology.
Mehrzad Karamimanesh
Ebrahim Abiri
Kourosh Hassanli
Mohammad Reza Salehi
Abdolreza Darabi
Published in:
Microelectron. J. (2021)
Keyphrases
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random access memory
nm technology
cmos technology
power consumption
low power
cost effective
case study
embedded dram
data processing
ultra low power
threshold selection
data transmission
rapid development
line segments
computationally efficient
key technologies
low voltage
computer systems