First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.
Zijie ZhengJiawei XieYiyuan SunYing XuXiaolin WangLeming JiaoZuopu ZhouQiwen KongYue ChenXiao GongPublished in: ICICDT (2023)