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First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.

Zijie ZhengJiawei XieYiyuan SunYing XuXiaolin WangLeming JiaoZuopu ZhouQiwen KongYue ChenXiao Gong
Published in: ICICDT (2023)
Keyphrases
  • floating gate
  • high frequency
  • thin film
  • neural network
  • multiscale
  • genetic algorithm ga