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The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device.

Zhiqiang YuXu HanJiamin XuCheng ChenXinru QuBaosheng LiuZijun SunTangyou Sun
Published in: Sensors (2023)
Keyphrases
  • simulated annealing
  • artificial intelligence
  • neural network
  • e learning
  • steady state
  • memory requirements
  • memory usage