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Virtual-ground sensing techniques for a 49-ns/200-MHz access time 1.8-V 256-Mb 2-bit-per-cell flash memory.

Binh Quang LeMichael AchterChin Ghee ChngXin GuoLee ClevelandPau-Ling ChenMichael Van BuskirkRobert W. Dutton
Published in: IEEE J. Solid State Circuits (2004)
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