Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress.
Xinze LiYuxuan WuQiao TengYing SunXiao GongGuillaume BesnardChristophe MalevilleOlivier WeberRui ZhangBing ChenDawei GaoRan ChengPublished in: ICICDT (2023)