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Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress.

Xinze LiYuxuan WuQiao TengYing SunXiao GongGuillaume BesnardChristophe MalevilleOlivier WeberRui ZhangBing ChenDawei GaoRan Cheng
Published in: ICICDT (2023)
Keyphrases
  • silicon on insulator
  • noise model
  • stress distribution
  • general purpose