2-layer 32Gb ReRAM memory device in 24nm technology.

Tz-Yi Liu Tian Hong Yan Roy Scheuerlein Yingchang Chen Jeffrey KoonYee Lee Gopinath Balakrishnan Gordon Yee Henry Zhang Alex Yap Jingwen Ouyang Takahiko Sasaki Sravanti Addepalli Ali Al-Shamma Chin-Yu Chen Mayank Gupta Greg Hilton Saurabh Joshi Achal Kathuria Vincent Lai Deep Masiwal Masahide Matsumoto Anurag Nigam Anil Pai Jayesh Pakhale Chang Hua Siau Xiaoxia Wu Ronald Yin Liping Peng Jang Yong Kang Sharon Huynh Huijuan Wang Nicolas Nagel Yoichiro Tanaka Masaaki Higashitani Tim Minvielle Chandu Gorla Takayuki Tsukamoto Takeshi Yamaguchi Mutsumi Okajima Takayuki Okamura Satoru Takase Takahiko Hara Hirofumi Inoue Luca Fasoli Mehrdad Mofidi Ritu Shrivastava Khandker Quader

Published in: ISSCC (2013)

Keyphrases

nm technology
power consumption
low power
high speed
memory requirements
power dissipation
memory space
multi layer
data acquisition
memory usage
limited memory
memory size
read write
input output
main memory
computer vision
image segmentation