A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory.
Min-Woong SeoMyunglae ChuHyun-Yong JungSuksan KimJiyoun SongJunan LeeSung-Yong KimJongyeon LeeSung-Jae ByunDaehee BaeMinkyung KimGwi-Deok LeeHeesung ShimChangyong UmChanghwa KimIn-Gyu BaekDoowon KwonHongki KimHyuksoon ChoiJonghyun GoJungChak AhnJaekyu LeeChangrok MoonKyupil LeeHyoung-Sub KimPublished in: VLSI Circuits (2021)
Keyphrases
- pixel level
- low power
- random noise
- cmos image sensor
- power consumption
- single chip
- low power consumption
- analog to digital converter
- image sensor
- image fusion
- low cost
- high speed
- superpixels
- cmos technology
- power dissipation
- digital signal processing
- raw image
- dynamic range
- real time
- mixed signal
- frame rate
- solid state
- storage devices
- foreground objects
- input image
- remote sensing
- flash memory
- multiscale
- object segmentation
- natural images
- image sequences
- parallel processing