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A 0.45-V 300-MHz 10T Flowthrough SRAM With Expanded write/ read Stability and Speed-Area-Wise Array for Sub-0.5-V Chips.

Meng-Fan ChangYung-Chi ChenChien-Fu Chen
Published in: IEEE Trans. Circuits Syst. II Express Briefs (2010)
Keyphrases
  • high speed
  • low power
  • storage medium
  • focal plane
  • storage devices
  • solid state
  • flash memory
  • power consumption
  • random access memory
  • read write
  • real time
  • pairwise
  • integrated circuit
  • image sensor
  • nm technology