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Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage.

Pengfei DongChenlu WangQinglong YanYingming WangJian WangSami AlghamdiZhihong LiuJincheng ZhangHong ZhouYue Hao
Published in: DRC (2023)
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