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High energy proton and heavy ion induced single event transient in 65-nm CMOS technology.
Jiaqi Liu
Yuanfu Zhao
Liang Wang
Dan Wang
Hongchao Zheng
Maoxin Chen
Lei Shu
Tongde Li
Dongqiang Li
Wei Guo
Published in:
Sci. China Inf. Sci. (2017)
Keyphrases
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high energy
cmos technology
low power
power consumption
low voltage
spl times
parallel processing
silicon on insulator
low cost
power dissipation
high speed