2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods.
José A. CarrilloIrene M. GambaArmando MajoranaChi-Wang ShuPublished in: J. Comput. Phys. (2006)
Keyphrases
- boundary conditions
- monte carlo methods
- monte carlo
- shape from shading
- sufficient conditions
- bayesian networks
- reaction diffusion
- semiconductor devices
- finite element method
- finite element model
- blood flow
- simulated annealing
- spline interpolation
- poisson equation
- boundary value problem
- image reconstruction
- learning algorithm