Login / Signup

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate.

Hae-Chang JeongKyung-Whan Yeom
Published in: IEICE Trans. Electron. (2012)
Keyphrases
  • high power
  • power consumption
  • dielectric constant
  • low power
  • silicon nitride
  • high speed
  • thin film
  • dynamic range
  • frequency band
  • power supply
  • high sensitivity
  • fuel cell