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A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability.

Debin KongJia YuanShan-shan LiHeng YouShushan Qiao
Published in: IEICE Electron. Express (2018)
Keyphrases
  • random access memory
  • power consumption
  • robust estimation
  • learning algorithm
  • image sequences
  • s box