Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.
Zuopu ZhouJiao LemingJiuren ZhouZijie ZhengYue ChenKaizhen HanYuye KangXiao GongPublished in: VLSI Technology and Circuits (2022)