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A BJT-Based Temperature-to-Digital Converter With ±60 mK (3~σ) Inaccuracy From -55 °C to +125 °C in 0.16-μm CMOS.
Bahman Yousefzadeh
Saleh Heidary Shalmany
Kofi A. A. Makinwa
Published in:
IEEE J. Solid State Circuits (2017)
Keyphrases
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analog to digital converter
data conversion
circuit design
low voltage
cmos image sensor
high speed
mixed signal
power consumption
low power
delay insensitive
analog vlsi
image sensor
solid state
digital content
control method
metal oxide semiconductor
low cost