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Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory.
H. G. Yang
Yi Shi
L. Pu
S. L. Gu
B. Shen
P. Han
R. Zhang
Y. D. Zhang
Published in:
Microelectron. J. (2003)
Keyphrases
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associative memory
memory usage
neural network
memory requirements
sensitivity analysis
multi channel
random access
finite difference
noisy channel