Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor.
Seok Gyu ChoiJung Hun OhBok-Hyung LeeByeong Ok LimSung Woon MoonDong-Hoon ShinSam-Dong KimJin Koo RheePublished in: IEICE Trans. Electron. (2006)