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resistive RAM device during constant voltage stress.

Paolo LorenziRosario RaoFernanda Irrera
Published in: Microelectron. Reliab. (2015)
Keyphrases
  • field effect transistors
  • power system
  • high voltage
  • case study
  • high speed
  • mathematical model
  • data acquisition
  • main memory
  • transmission line
  • low voltage
  • stress distribution