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A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications.
Thomas Bücher
Janusz Grzyb
Philipp Hillger
Holger Rücker
Bernd Heinemann
Ullrich R. Pfeiffer
Published in:
ESSCIRC (2021)
Keyphrases
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power consumption
mixed signal
high power
cmos technology
silicon on insulator
solar cell
low power
cost effective
case study
key technologies
chance discovery
rapid development
nm technology
communication systems
ultra wide band
local area network
web intelligence
personal computer