A 325-μW step-16 digital-sensor based on dual-delay-chain in 180-nm CMOS.
Jie GanXu ZhaoJiajie HuYuanhui YangLinsong ZhuZonglin LiJiahao LuDongsheng LiuPublished in: Microelectron. J. (2022)
Keyphrases
- metal oxide semiconductor
- circuit design
- low cost
- power consumption
- cmos image sensor
- high speed
- post processing
- nm technology
- integrated circuit
- power dissipation
- phase locked loop
- neural network
- analog to digital converter
- random access memory
- critical path
- cmos technology
- digital media
- sensor data
- video data
- digital libraries