A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.
Qing DongZhehong WangJongyup LimYiqun ZhangYi-Chun ShihYu-Der ChihTsung-Yung Jonathan ChangDavid T. BlaauwDennis SylvesterPublished in: ISSCC (2018)