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A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.

Qing DongZhehong WangJongyup LimYiqun ZhangYi-Chun ShihYu-Der ChihTsung-Yung Jonathan ChangDavid T. BlaauwDennis Sylvester
Published in: ISSCC (2018)
Keyphrases
  • hard disk
  • read write
  • random access
  • write operations
  • access control
  • times faster
  • main memory
  • file system
  • design considerations
  • database
  • low cost
  • data storage
  • disk drives