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Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz.

Fumiya HattoriHirokatsu UmegamiMasayoshi Yamamoto
Published in: IET Circuits Devices Syst. (2017)
Keyphrases
  • cmos technology
  • low power
  • nm technology
  • high speed
  • multiple input
  • power consumption
  • low voltage
  • low cost
  • parallel processing
  • field effect transistors
  • power dissipation
  • nano scale
  • steady state
  • flip flops