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Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO radiation environments.

Muhammad SajidNikolay G. ChecheninFrank Sill TorresUsman Ali GulzariMuhammad Usman ButtZhu MingE. U. Khan
Published in: Microelectron. Reliab. (2017)
Keyphrases
  • power consumption
  • random access memory
  • real world
  • x ray
  • event detection
  • three dimensional
  • infrared
  • neural network
  • high speed
  • dynamic environments
  • low power
  • temporal patterns
  • cmos technology