A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology.
Jeongkyun KimByungho YookYoungo LeeTaemin ChoiKyuwon ChoiChanho LeeJuchang LeeHyeongcheol KimSeok YunChanghoon DoMinwoo KwakMijoung KimYunrong LiHoyoung TangJaeyoung KimInhak LeeDongwook SeoSangyeop BaeckPublished in: IEEE J. Solid State Circuits (2024)