Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application.
Mingcheng ChangNigel ChanVivek JoshiSandra HeckerUdo ZillerPetra PothAlban ZakaTom HerrmannSeunghwan SeoHongsik YoonXin ZouZhen XuHema RamamurthyTorsten KlickGabriele CongedoYoumean LeeElke ErbenGerd ZschaetzschJuergen FaulJon KluthJoerg SchmidRalf Van BentumChad WeintraubPublished in: ESSDERC (2018)