Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application.

Mingcheng Chang Nigel Chan Vivek Joshi Sandra Hecker Udo Ziller Petra Poth Alban Zaka Tom Herrmann Seunghwan Seo Hongsik Yoon Xin Zou Zhen Xu Hema Ramamurthy Torsten Klick Gabriele Congedo Youmean Lee Elke Erben Gerd Zschaetzsch Juergen Faul Jon Kluth Joerg Schmid Ralf Van Bentum Chad Weintraub

Published in: ESSDERC (2018)

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