Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures.
Daniel HofstetterEsther BaumannFabrizio Raphael GiorgettaRicardo ThéronHong WuWilliam J. SchaffJahan DawlatyPaul A. GeorgeLester F. EastmanFarhan RanaPrem K. KandaswamyFabien GuillotEva MonroyPublished in: Proc. IEEE (2010)