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Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD).

Cesare RonsisvalleV. Enea
Published in: Microelectron. Reliab. (2010)
Keyphrases
  • high voltage
  • operating conditions
  • partial discharge
  • significant improvement
  • normal operation
  • real time
  • data mining
  • learning algorithm
  • classification accuracy
  • genetic programming