A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS.
Chihiro KamidakiYuma OkuyamaTatsuo KuboWooram LeeCaglar OzdagBodhisatwa SadhuYo YamaguchiNing GuanPublished in: IEICE Trans. Electron. (2023)